This letter presents the improvement of the phase noise (PN) of a voltage-controlled oscillator (VCO) by using a defected ground structure (DGS) resonator with a high-band transmission pole. The proposed DGS resonator has two loops in a coplanar stripline topology. The outer loop is loaded by a series capacitance, which produces the high-band transmission pole. The overall combination has a parallel capacitor to generate the necessary parallel resonance for the VCO operation. This proposed DGS resonator has a sharper impedance and frequency response slope, which results in an improved quality factor. In return, utilization of this DGS resonator into a $K_{U}$ -Band VCO reduces its PN. The prototyped VCO in 0.18- $\mu \text{m}$ CMOS oscillates at 15.52 GHz and shows a PN of −111.27 and −134.07 dBc/Hz at 1- and 10-MHz offset, respectively, while consuming 3.3-mW power. The VCO has a frequency tuning range of 9.5%, which results in a figure of merit (FoM) of −192.7 dB.

中文翻译：

---

-192.7-dBc/Hz FoM KU-Band VCO，使用 DGS 谐振器和 0.18-μm CMOS 技术的高频带传输极

这封信介绍了通过使用具有高频带传输极的缺陷接地结构 (DGS) 谐振器来改善压控振荡器 (VCO) 的相位噪声 (PN)。建议的 DGS 谐振器在共面带状线拓扑中具有两个环路。外环由串联电容加载，产生高频带传输极。整个组合具有一个并联电容器，可为 VCO 操作生成必要的并联谐振。这种建议的 DGS 谐振器具有更陡峭的阻抗和频率响应斜率，从而提高了品质因数。作为回报，将此 DGS 谐振器用于 $K_{U}$ -Band VCO 降低其 PN。0.18-的原型VCO $\mu \text{m}$ CMOS 的振荡频率为 15.52 GHz，在 1-MHz 和 10-MHz 偏移下的 PN 分别为 -111.27 和 -134.07 dBc/Hz，同时消耗 3.3-mW 功率。VCO 的频率调谐范围为 9.5%，因此品质因数 (FoM) 为 −192.7 dB。