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Microwave Dielectric Properties of Low-Temperature Co-fired Mg 2 Al 4 Si 5 O 18 -BaCu(B 2 O 5 ) Ceramics
Journal of Electronic Materials ( IF 2.1 ) Pub Date : 2019-11-27 , DOI: 10.1007/s11664-019-07830-2
Jiji Deng , Huanfu Zhou , Shixuan Li , Chengming Lu , Kangguo Wang , Wendong Sun

In this work, the sintering temperatures of Mg2Al4Si5O18 ceramics was reduced to ∼ 900°C by adding BaCu(B2O5) (BCB). Mg2Al4Si5O18 reacts with BCB to form the second phase BaAl2Si2O8. As the sintering temperature was 950°C, the second phase transformed from hexagonal BaAl2Si2O8 to monoclinic BaAl2Si2O8 with increasing BCB content. When the BCB content was 15 wt.%, the second phase formed from hexagonal BaAl2Si2O8 to monoclinic BaAl2Si2O8 with increasing sintering temperature. Especially, the sintering temperature of Mg2Al4Si5O18 + 30 wt.%BCB ceramic was reduced to 900°C and the ceramics exhibited good microwave dielectric properties with Q × f = 21,300 GHz, εr= 3.4 and τf = − 30 ppm/°C. The results showed that Mg2Al4Si5O18-BCB ceramics are candidates for LTCC devices.

中文翻译:

低温共烧Mg 2 Al 4 Si 5 O 18 -BaCu(B 2 O 5)陶瓷的微波介电性能

在这项工作中,通过添加BaCu(B 2 O 5)(BCB)将Mg 2 Al 4 Si 5 O 18陶瓷的烧结温度降低到约900°C 。Mg 2 Al 4 Si 5 O 18与BCB反应形成第二相BaAl 2 Si 2 O 8。当烧结温度为950℃时,第二相从六方BaAl 2 Si 2 O 8转变为单斜BaAl 2 Si 2 O 8。随着BCB含量的增加。当BCB含量为15wt。%时,随着烧结温度的升高,第二相由六方BaAl 2 Si 2 O 8形成为单斜BaAl 2 Si 2 O 8。特别是,对烧结温度的Mg 2的Al 4的Si 5 ö 18  + 30wt。%的BCB陶瓷降低到900℃和陶瓷显示出具有良好的介电性能Q  ×  ˚F  = 21300千兆赫,ε - [R = 3.4和τ ˚F  =-30 ppm /°C。结果表明,Mg 2 Al 4Si 5 O 18 -BCB陶瓷是LTCC器件的候选材料。
更新日期:2020-01-04
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