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3 D NiO Nanowall Hole-Transporting Layer for the Passivation of Interfacial Contact in Inverted Perovskite Solar Cells.
ChemSusChem ( IF 8.4 ) Pub Date : 2020-01-03 , DOI: 10.1002/cssc.201903025
Xin Yin 1 , Jifeng Zhai 1 , Pingfan Du 1 , Ni Li 1 , Lixin Song 1 , Jie Xiong 1, 2 , Frank Ko 3
Affiliation  

Nickel oxide (NiO) materials with excellent stability and favorable energy bands are desirable candidates for hole-selective contact (HSC) of inverted perovskite solar cell (PSC). However, studies that focus on addressing interfacial issues, which are induced by the poor NiO/perovskite contact or other defects, are scarce. In this study, a facile one-step hydrothermal strategy is demonstrated for the development of a 3 D NiO nanowall (NW) film as a promising HSC. The new NiO NWs HSC exhibits a robust and homogenous mesoporous network structure, which improved the NiO/perovskite interface contact, passivated the interfacial defect and improved the quality of the perovskite film. The optimized interface features enabled a power conversion efficiency (PCE) approaching 18 %. A diethanolamine (DEA) interlayer was introduced to further passivate the intrinsic defect of the NiO surface, resulting in better charge transfer with suppressed recombination loss. As a result, the champion PCE of the NiO NWs/DEA-based device was increased to 19.16 % with a high open-circuit voltage (≈1.11 V) and fill factor (>80 %), which is prominent in methylammonium lead iodide-based inverted PSCs. Furthermore, the device exhibited better stability and lower hysteresis behavior than a conventional solution-based NiO nanocrystal device.

中文翻译:

3D NiO纳米壁空穴传输层,用于钝化钙钛矿太阳能电池中的界面接触钝化。

具有优异稳定性和良好能带的氧化镍(NiO)材料是倒钙钛矿太阳能电池(PSC)的空穴选择接触(HSC)的理想候选材料。但是,缺乏针对NiO /钙钛矿接触不良或其他缺陷引起的界面问题的研究。在这项研究中,为开发3D NiO纳米壁(NW)膜作为有前途的HSC展示了一种简便的一步式水热策略。新型NiO NWs HSC表现出坚固而均匀的介孔网络结构,改善了NiO /钙钛矿界面接触,钝化了界面缺陷,并改善了钙钛矿薄膜的质量。优化的接口功能使电源转换效率(PCE)接近18%。引入二乙醇胺(DEA)中间层以进一步钝化NiO表面的固有缺陷,从而在抑制重组损失的情况下实现更好的电荷转移。结果,具有高开路电压(≈1.11V)和填充因子(> 80%)的NiO NWs / DEA基设备的冠军PCE增至19.16%,这在甲基铵碘化铅中尤为突出。基于倒置的PSC。此外,与常规的基于溶液的NiO纳米晶体器件相比,该器件具有更好的稳定性和更低的磁滞性能。在以甲基铵碘化铅为基础的倒装PSC中尤为突出。此外,与常规的基于溶液的NiO纳米晶体器件相比,该器件具有更好的稳定性和更低的磁滞性能。在以甲基铵碘化铅为基础的倒装PSC中尤为突出。此外,与常规的基于溶液的NiO纳米晶体器件相比,该器件具有更好的稳定性和更低的磁滞性能。
更新日期:2020-02-07
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