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A 112 Gb/s PAM4 Silicon Photonics Transmitter with Microring Modulator and CMOS Driver
Journal of Lightwave Technology ( IF 4.7 ) Pub Date : 2020-01-01 , DOI: 10.1109/jlt.2019.2938731
Hao Li , Bryan Casper , Ganesh Balamurugan , Meer Sakib , Jie Sun , Jeffery Driscoll , Ranjeet Kumar , Hasitha Jayatilleka , Haisheng Rong , James Jaussi

Microring modulators (MRMs) with CMOS electronics enable compact low power transmitter solutions for 400G Ethernet and future on-package optical transceivers. In this paper, we present a 112 Gb/s PAM4 transmitter using silicon photonic MRM, on-chip laser and co-packaged 28 nm CMOS driver. We describe the impact of static and dynamic MRM nonlinearity on PAM4 signaling and present a dual path nonlinear pre-distortion technique to compensate both effects. PAM4 measurement results of our transmitter at 112 Gb/s show that TDECQ <0.7 dB is achieved from 30 °C to 60 °C while dissipating 6 pJ/bit. We also present link level measurements at 112 Gb/s PAM4 obtained by coupling this transmitter with our previously published CMOS TIA-based receiver, to demonstrate the feasibility of low cost optical transceivers through CMOS integration of optical interface circuits.

中文翻译:

具有微环调制器和 CMOS 驱动器的 112 Gb/s PAM4 硅光子发射器

带有 CMOS 电子器件的微环调制器 (MRM) 可为 400G 以太网和未来的封装光收发器提供紧凑型低功率发射器解决方案。在本文中,我们展示了一种使用硅光子 MRM、片上激光器和共同封装的 28 nm CMOS 驱动器的 112 Gb/s PAM4 发射器。我们描述了静态和动态 MRM 非线性对 PAM4 信号的影响,并提出了一种双路径非线性预失真技术来补偿这两种影响。我们的发射机在 112 Gb/s 时的 PAM4 测量结果表明,TDECQ <0.7 dB 在 30 °C 到 60 °C 之间实现,同时耗散 6 pJ/bit。我们还提供了通过将此发射器与我们之前发布的基于 CMOS TIA 的接收器耦合而获得的 112 Gb/s PAM4 的链路电平测量结果,
更新日期:2020-01-01
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