Growing graphene on metal thin films, especially Cu or CuNi thin films, has become an efficient way to obtain large single-crystal graphene. Most studies focus on the epitaxial growth of graphene, but the effects of defects, such as wrinkles and point defects, on graphene stability are rarely explored. In this work, we mainly focus on the distribution of wrinkles and point defects to study the stability of graphene growth on CuNi thin films. It is found that graphene grown on a CuNi thin film shows the same peripheral etching phenomena other than central etching holes or wrinkle stripes whether it is cooled or not. Raman and TEM studies show that the graphene has high quality. We believe that graphene grown on a CuNi thin film has few wrinkles and point defects. Thus, the results show that graphene grown on a CuNi thin film is more stable than graphene grown on a Cu foil in a high-temperature hydrogen and air environment.

中文翻译：

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高温氢气/氧气气氛下CuNi薄膜上石墨烯生长的稳定性

在金属薄膜（尤其是Cu或CuNi薄膜）上生长石墨烯已成为获得大型单晶石墨烯的有效方法。大多数研究都集中在石墨烯的外延生长上，但是很少探索诸如皱纹和点缺陷之类的缺陷对石墨烯稳定性的影响。在这项工作中，我们主要关注皱纹和点缺陷的分布，以研究石墨烯在CuNi薄膜上生长的稳定性。发现在CuNi薄膜上生长的石墨烯除了中心刻蚀孔或皱纹条纹以外，无论是否冷却，都显示出相同的周边刻蚀现象。拉曼和TEM研究表明，石墨烯具有很高的品质。我们认为，在CuNi薄膜上生长的石墨烯几乎没有皱纹和尖端缺陷。从而，