Transparent flexible transistor array requests large-area fabrication, high integration, high manufacturing throughput, inexpensive process, uniformity in transistor performance, and reproducibility. This study suggests a facile and reliable approach to meet the requirements. We use the Al-coated polymer nanofiber patterns obtained by electrohydrodynamic (EHD) printing as a photomask. We use the lithography and deposition to produce highly aligned nanolines (NLs) of metals, insulators, and semiconductors on large substrates. With these NLs, we demonstrate a highly integrated NL field-effect transistor (NL-FET) array (105/(4 × 4 in2), 254 pixel-per-inch) made of pentacene and indium zinc oxide semiconductor NLs. In addition, we demonstrate a NL complementary inverter (NL-CI) circuit consisting of pentacene and fullerene NLs. The NL-FET array shows high transparency (∼90%), flexibility (stable at 2.5 mm bending radius), uniformity (∼90%), and high performances (mobility = 0.52 cm2/(V s), on-off ratio = 7.0 × 106). The NL-CI circuit also shows high transparency, flexibility, and typical switching characteristic with a gain of 21. The reliable large-scale fabrication of the various NLs proposed in this study is expected to be applied for manufacturing transparent flexible nanoelectronic devices.

中文翻译：

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在大面积内具有高集成度的透明柔性纳米线场效应晶体管阵列。

透明柔性晶体管阵列要求大面积制造，高集成度，高制造吞吐量，便宜的工艺，晶体管性能的均匀性和可再现性。这项研究提出了一种简便而可靠的方法来满足要求。我们将通过电液动力学（EHD）印刷获得的涂有Al的聚合物纳米纤维图案用作光掩模。我们使用光刻和沉积技术在大型基板上生产金属，绝缘体和半导体的高度对准的纳米线（NL）。通过这些NL，我们演示了由并五苯和铟锌氧化物半导体NL制成的高度集成的NL场效应晶体管（NL-FET）阵列（105 /（4×4 in2），每英寸254像素）。此外，我们演示了由并五苯和富勒烯NL组成的NL互补逆变器（NL-CI）电路。NL-FET阵列显示出高透明度（〜90％），柔韧性（在2.5 mm弯曲半径下稳定），均匀性（〜90％）和高性能（迁移率= 0.52 cm2 /（V s），开/关比= 7.0×106）。NL-CI电路还显示出高透明性，灵活性和典型开关特性，增益为21。本研究中提出的各种NL的可靠大规模制造有望用于制造透明柔性纳米电子器件。