Nano-structured phase masks offer intriguing possibilities in electron-beam shaping. The fabrication of such phase masks is typically achieved by focused (Ga+-)ion beam milling of thin membranes. To overcome the problem of Ga implantation in the phase mask, we explore the fabrication of silicon-nitride phase masks using thermal scanning probe lithography combined with wet and dry etching. The functionality of the phase masks is demonstrated by generation of electron Vortex and Bessel beams. Major benefit of thermal scanning probe lithography in addition to the absence of ion implantation is the high accuracy and control over the patterned structure and depth.

中文翻译：

---

通过热扫描探针光刻技术制造的用于电子显微镜的相位掩模。

纳米结构的相位掩模在电子束成形中提供了引人入胜的可能性。通常通过聚焦（Ga +-）离子束研磨薄膜来实现这种相位掩模的制造。为了克服在相掩模中植入Ga的问题，我们探索了使用热扫描探针光刻技术结合湿法和干法蚀刻技术制造氮化硅相掩模的方法。通过电子涡旋和贝塞尔光束的产生证明了相位掩模的功能。除了没有离子注入外，热扫描探针光刻的主要优点是高精度以及对图案化结构和深度的控制。