This work examines the role of 672 nm optical illumination on the diffusion and activation of B in Si as a function of various factors. The factors studied include length of anneal, maximum temperature of anneal, type of co-implanted and pre-amorphizing species and ambient oxygen concentration. The anneal conditions fell into one of three categories: (1) high-temperature (>900°C) spike and 10-second anneals; (2) low temperature (550°C) 30-minute anneals; and (3) room-temperature long-term “anneals”. Implanted species included BF2 implants, pre-amorphized B-only implants, and pre-amorphized BF2 implants. Finally, the ambient oxygen concentration was varied from atmospheric pressure to 100 ppm. The results show that illumination: (1) affects the diffusion of B on spike anneal time frames; (2) has limited effect on diffusion over 10-second time frames; and (3) fails to enhance the activation of B during low-temperature solid phase epitaxy and at room temperature. Additionally, illumination has no effect on B-diffusion when oxygen is present in ambient concentrations but does show an effect when the presence of oxygen is restricted. Finally, the presence of F affects both the net diffusion of B in Si and the relative effect of illumination on the diffusion of B.

中文翻译：

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微波快速热处理过程中无热光子对硼扩散和活化的影响

这项工作检查了 672 nm 光学照明对 Si 中 B 扩散和活化的作用，作为各种因素的函数。研究的因素包括退火长度、退火的最高温度、共同注入和预非晶化物质的类型以及环境氧浓度。退火条件属于以下三类之一：(1) 高温 (>900°C) 尖峰和 10 秒退火；（2）低温（550℃）30分钟退火；(3) 室温长期“退火”。植入物包括BF2植入物、预非晶化B-only植入物和预非晶化BF2植入物。最后，环境氧浓度从大气压变化到 100 ppm。结果表明光照：（1）影响B在尖峰退火时间范围内的扩散；(2) 在 10 秒的时间范围内对扩散的影响有限；(3) 在低温固相外延和室温下未能增强 B 的活化。此外，当氧气以环境浓度存在时，照明对 B 扩散没有影响，但当氧气的存在受到限制时确实会显示影响。最后，F 的存在影响 B 在 Si 中的净扩散和光照对 B 扩散的相对影响。