Three novel conjugated polymers based on 9,9′‐dioctylfluorene unit and isoindolo[2,1‐a]benzimidazol‐11‐one with different fluorine substituents (0, 2 and 4) were synthesized. PLED and resistive memory devices based on these polymers were prepared consequently. PLED based on four‐fluorinated polymer showed the highest maximum brightness of 3192 cd m⁻² with almost 5‐fold increase of current efficiency 8‐fold increase of external quantum efficiency compared to that of the other two, and all the PLEDs exhibited good emission stability with no noticeable change of electroluminescence even under high voltage of 10 V. The memory device of doubly‐fluorinated polymer exhibited ternary flash behavior with threshold voltages below −2.5 V, while device of four‐fluorinated polymer possessed ON/OFF current ratio above 10⁴. Impact of fluorine substitutions on the performance of devices were briefly investigated. The results revealed that the improvement of device performance might not scale with the increasing number of fluorine substitutions, and the four‐fluorine‐substituted polymer and doubly‐fluorinated polymer could be encouraging materials for applications of PLED and resistive memory device and worth of further design of other new polymer systems.

中文翻译：

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用于发光和三元闪存器件的基于芴的新型共轭侧链氟化聚合物。

合成了三种基于9,9'-二辛基芴单元和具有不同氟取代基（0、2和4）的异吲哚并[2,1- a ]苯并咪唑-11-酮的新型共轭聚合物。由此制备了基于这些聚合物的PLED和阻变存储器件。基于四氟化聚合物的PLED表现出最高的最大亮度3192 cd m ^-2，与其他两种相比，电流效率提高了近5倍，外量子效率提高了8倍，并且所有PLED都表现出良好的发射性能即使在10 V的高电压下，电致发光也保持稳定，电致发光没有明显变化。双氟化聚合物存储器件表现出三元闪存行为，阈值电压低于-2.5 V，而四氟化聚合物存储器件的开/关电流比高于10 ⁴ . 简要研究了氟替代对器件性能的影响。结果表明，器件性能的提高可能不会随着氟取代数量的增加而扩大，四氟取代聚合物和双氟聚合物可能是 PLED 和阻变存储器件应用的令人鼓舞的材料，值得进一步设计其他新型聚合物体系。