This paper presents a physically valid quasi-ballistic drain current model applicable for nanoscale symmetric Double Gate (SDG) MOSFETs. The proposed drain current model includes both diffusive and ballistic transport phenomena. The model considers the important positional carrier scattering dependency effect near the source region described in terms of transmission and reflection co-efficients related to the scattering theory. The significance of carrier transport near the bottleneck source region is illustrated where the carriers diffuse into the channel at a relatively lower velocity before accelerating ballistically. The results obtained demonstrate carrier scattering dependency at the critical layer defined near the low field source region on the drain current characteristics. The proposed model partly evolves from Natori’s ballistic bulk MOSFET model that is modified accordingly to be valid for a symmetric Double Gate MOSFET in the nanoscale regime. Carrier degeneracy and Fermi–Dirac statistics are included in the work so as to justify the complete physicality of the model. The model is further extended and is shown to be continuous in terms of terminal charges and capacitances in all regions of operation. A comparative analysis is also done between the proposed quasi-ballistic model and a hypothetical complete ballistic device.

中文翻译：

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具有位置载流子散射依赖性的准弹道漏电流，电荷和电容模型对纳米级对称DG MOSFET有效。

本文提出了一种适用于纳米级对称双栅极（SDG）MOSFET的物理有效准弹道漏电流模型。提出的漏极电流模型包括扩散和弹道传输现象。该模型考虑了与散射理论相关的透射和反射系数，对源区域附近的重要位置载流子散射依赖性效应进行了描述。示出了在瓶颈源区域附近的载流子传输的重要性，其中载流子在弹道加速之前以相对较低的速度扩散到通道中。获得的结果证明了在低场源极区域附近定义的临界层上的载流子散射对漏极电流特性的依赖性。拟议的模型部分是根据Natori的弹道体MOSFET模型发展而来的，该模型经过相应修改后可以在纳米尺度的对称双栅极MOSFET上使用。载波简并性和费米-狄拉克（Fermi-Dirac）统计信息包括在工作中，以便证明模型的完整物理性。该模型得到了进一步扩展，并且在所有操作区域的端子电荷和电容方面均表现出连续性。拟议的准弹道模型与假设的完整弹道装置之间也进行了比较分析。该模型得到了进一步扩展，并且在所有操作区域的端子电荷和电容方面均表现出连续性。拟议的准弹道模型与假设的完整弹道装置之间也进行了比较分析。该模型得到了进一步扩展，并且在所有操作区域的端子电荷和电容方面均表现出连续性。拟议的准弹道模型与假设的完整弹道装置之间也进行了比较分析。