We observe a gamma-irradiation-induced change in electrically detected magnetic resonance (EDMR) in TiN/Ti/HfO2/TiN resistive random access memory (RRAM). EDMR measurements exclusively detect electrically active defects, which are directly involved in the transport mechanisms within these devices. The EDMR response has an isotropic g value of 2.001 ± 0.0003. The response increases dramatically with increased gamma irradiation. We tentatively associate this EDMR response with spin-dependent trap-assisted tunneling events at O2− centers coupled to hafnium ions. Although our study cannot fully identify the role of these defects in electronic transport, the study does unambiguously identify changes in transport defects caused by the ionizing radiation on defects involved in electronic transport in RRAM devices. This paper also contributes more broadly to the RRAM field by providing direct, though incomplete, information about atomic scale defects involved in electronic transport in leading RRAM systems.

中文翻译：

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通过电检测磁共振研究 TiN/Ti/HfO2/TiN 阻变随机存取存储器的总电离剂量效应

我们在 TiN/Ti/HfO2/TiN 电阻式随机存取存储器 (RRAM) 中观察到伽马辐射引起的电检测磁共振 (EDMR) 变化。EDMR 测量专门检测电活性缺陷，这些缺陷直接涉及这些设备内的传输机制。EDMR 响应的各向同性 g 值为 2.001 ± 0.0003。随着伽马射线照射的增加，响应急剧增加。我们暂时将这种 EDMR 响应与 O2− 中心与铪离子耦合的自旋相关陷阱辅助隧道事件联系起来。尽管我们的研究不能完全确定这些缺陷在电子传输中的作用，但该研究确实明确地识别了电离辐射对 RRAM 器件中电子传输所涉及的缺陷造成的传输缺陷的变化。本文还通过提供有关领先 RRAM 系统中电子传输所涉及的原子级缺陷的直接（尽管不完整）信息，为 RRAM 领域做出了更广泛的贡献。