Within the last twenty years, the status of the spin-orbit interaction has evolved from that of a simple atomic contribution to a key effect that modifies the electronic band structure of materials. It is regarded as one of the basic ingredients for spintronics, locking together charge and spin degrees of freedom and recently it is instrumental in promoting a new class of compounds, the topological insulators. In this review, we present the current status of the research on the spin-orbit coupling in transition metal oxides, discussing the case of two semiconducting compounds, [Formula: see text] and [Formula: see text], and the properties of surface and interfaces based on these. We conclude with the investigation of topological effects predicted to occur in different complex oxides.

中文翻译：

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自旋轨道游乐场：过渡金属氧化物的表面和界面

在过去的二十年里，自旋轨道相互作用的地位已经从简单的原子贡献演变为改变材料电子能带结构的关键效应。它被认为是自旋电子学的基本成分之一，将电荷和自旋自由度锁定在一起，最近它有助于促进一类新化合物，即拓扑绝缘体。在这篇综述中，我们介绍了过渡金属氧化物中自旋轨道耦合的研究现状，讨论了两种半导体化合物的情况，[分子式：见正文]和[分子式：见正文]，以及表面的性质以及基于这些的接口。我们最后对预测在不同复合氧化物中发生的拓扑效应进行了调查。