CMOS compatible, high voltage SOI MESFETs have been fabricated using a standard 3.3 V CMOS process without any changes to the process flow. A 0.6 μm gate length device operates with a cut-off frequency of 7.3 GHz and a maximum oscillation frequency of 21 GHz. There is no degradation in device performance up to its breakdown voltage, which greatly exceeds that of CMOS devices on the same process. Other figures-of-merit of relevance to RF front-end design are presented, including the maximum stable gain and noise figure. An accurate representation of the device in SPICE has been developed using the commercially available TOM3 model. Using the SOI MESFET model, a source degenerated low noise RF amplifier targeting operation near 1 GHz has been designed. The amplifier was fabricated on a PCB board and operates at 940 MHz with a minimum NF of 3.8 dB and RF gain of 9.9 dB while only consuming 5mW of DC power.

CMOS 兼容的高压 SOI MESFET 使用标准 3.3 V CMOS 工艺制造，工艺流程没有任何变化。0.6 μm 栅极长度器件的工作截止频率为 7.3 GHz，最大振荡频率为 21 GHz。器件性能直到其击穿电压都没有下降，这大大超过了相同工艺的 CMOS 器件。介绍了与 RF 前端设计相关的其他品质因数，包括最大稳定增益和噪声系数。使用商用 TOM3 模型开发了 SPICE 中器件的准确表示。使用 SOI MESFET 模型，设计了一个源退化低噪声 RF 放大器，目标操作频率接近 1 GHz。该放大器在 PCB 板上制造，工作频率为 940 MHz，最小 NF 为 3。