We introduce a new scheme of nanocontact printing that fabricates nanoarrays using stamps generated by ultraviolet nanoimprint lithography. Array patterns can be generated by this printing technique in a high-density (number of features per unit area) fashion with a feature size as low as 30 nm and period of 100 nm. Sub-500 nm alignment accuracy for multilayer printing has been obtained using a traditional contact mask aligner. We also demonstrate that we can image a nanoarray labeled by streptavidin by atomic force microscope (AFM).

中文翻译：

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通过纳米接触印刷制造高密度纳米阵列的新方法。

我们介绍了一种新的纳米接触印刷方案，该方案使用紫外线纳米压印光刻产生的印章制造纳米阵列。阵列图案可以通过这种印刷技术以高密度（每单位面积的特征数量）方式生成，特征尺寸低至 30 nm，周期为 100 nm。使用传统的接触掩模对准器已获得用于多层印刷的亚 500 nm 对准精度。我们还证明我们可以通过原子力显微镜 (AFM) 对由链霉亲和素标记的纳米阵列进行成像。