This paper examines the use of deep reactive ion etching of silicon with fluorine high-density plasmas at cryogenic temperatures to produce silicon master molds for vertical microcantilever arrays used for controlling substrate stiffness for culturing living cells. The resultant profiles achieved depend on the rate of deposition and etching of an SiOxFy polymer, which serves as a passivation layer on the sidewalls of the etched structures in relation to areas that have not been passivated with the polymer. We look at how optimal tuning of two parameters, the O2 flow rate and the capacitively coupled plasma power, determine the etch profile. All other pertinent parameters are kept constant. We examine the etch profiles produced using electron-beam resist as the main etch mask, with holes having diameters of 750 nm, 1 ¿m , and 2 ¿m.

中文翻译：

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硅的低温蚀刻：制造垂直微悬臂母模的另一种方法

本文研究了在低温下使用氟高密度等离子体对硅进行深度反应离子蚀刻来生产用于控制基板刚度以培养活细胞的垂直微悬臂阵列的硅母模。所获得的轮廓取决于 SiOxFy 聚合物的沉积和蚀刻速率，SiOxFy 聚合物用作蚀刻结构侧壁上的钝化层，与未用聚合物钝化的区域相关。我们研究了 O2 流速和电容耦合等离子体功率这两个参数的最佳调整如何确定蚀刻轮廓。所有其他相关参数保持不变。我们检查了使用电子束抗蚀剂作为主要蚀刻掩模产生的蚀刻轮廓，孔的直径分别为 750 nm、1 μm 和 2 μm。