Two-dimensional (2D) transition metal dichalcogenides (TMDs) have stimulated the modern technology due to their unique and tunable electronic, optical, and chemical properties. Therefore, it is very important to study the control parameters for material preparation to achieve high quality thin films for modern electronics, as the performance of TMDs-based device largely depends on their layer number, grain size, orientation, and morphology. Among the synthesis methods, chemical vapor deposition (CVD) is an excellent technique, vastly used to grow controlled layer of 2D materials in recent years. In this review, we discuss the different growth routes and mechanisms to synthesize high quality large size TMDs using CVD method. We highlight the recent advances in the controlled growth of mono- and few-layer TMDs materials by varying different growth parameters. Finally, different strategies to control the grain size, boundaries, orientation, morphology and their application for various field of are also thoroughly discussed.

中文翻译：

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通过控制层数和形貌的化学气相沉积法合成2D过渡金属二卤化物。

二维（2D）过渡金属二硫化碳（TMD）由于其独特的，可调节的电子，光学和化学特性而激发了现代技术。因此，研究基于材料制备的控制参数以实现现代电子产品的高质量薄膜非常重要，因为基于TMD的器件的性能主要取决于其层数，晶粒尺寸，取向和形态。在合成方法中，化学气相沉积（CVD）是一项出色的技术，近年来广泛用于生长2D材料的受控层。在这篇综述中，我们讨论了使用CVD方法合成高质量大尺寸TMD的不同生长途径和机理。我们通过改变不同的生长参数，重点介绍了单层和少层TMDs材料可控生长的最新进展。最后，还详细讨论了控制晶粒尺寸，边界，取向，形态的不同策略及其在各个领域的应用。