We report carrier density measurements and electron-electron (e-e) interactions in monolayer epitaxial graphene grown on SiC. The temperature (T)-independent carrier density determined from the Shubnikov-de Haas (SdH) oscillations clearly demonstrates that the observed logarithmic temperature dependence of Hall slope in our system must be due to e-e interactions. Since the electron density determined from conventional SdH measurements does not depend on e-e interactions based on Kohn's theorem, SdH experiments appear to be more reliable compared with the classical Hall effect when one studies the T dependence of the carrier density in the low T regime. On the other hand, the logarithmic T dependence of the Hall slope δRxy/δB can be used to probe e-e interactions even when the conventional conductivity method is not applicable due to strong electron-phonon scattering.

中文翻译：

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SiC上生长的单层外延石墨烯中电子密度和电子-电子相互作用的温度依赖性。

我们报告了在SiC上生长的单层外延石墨烯中的载流子密度测量和电子-电子（ee）相互作用。由Shubnikov-de Haas（SdH）振荡确定的与温度（T）无关的载流子密度清楚地表明，在我们的系统中，所观察到的霍尔斜率的对数温度依赖性必须归因于ee相互作用。由于从常规SdH测量确定的电子密度不取决于基于Kohn定理的ee相互作用，因此当人们研究低T态中载流子密度的T依赖性时，SdH实验似乎比经典的霍尔效应更可靠。另一方面，