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Synthesis and Screening of Phase Change Chalcogenide Thin Film Materials for Data Storage.
ACS Combinatorial Science ( IF 3.903 ) Pub Date : 2017-05-26 , DOI: 10.1021/acscombsci.7b00047
Samuel Guerin 1 , Brian Hayden 1 , Daniel W Hewak , Chris Vian 1
Affiliation  

A combinatorial synthetic methodology based on evaporation sources under an ultrahigh vacuum has been used to directly synthesize compositional gradient thin film libraries of the amorphous phases of GeSbTe alloys at room temperature over a wide compositional range. An optical screen is described that allows rapid parallel mapping of the amorphous-to-crystalline phase transition temperature and optical contrast associated with the phase change on such libraries. The results are shown to be consistent with the literature for compositions where published data are available along the Sb2Te3-GeTe tie line. The results reveal a minimum in the crystallization temperature along the Sb2Te3-Ge2Te3 tie line, and the method is able to resolve subsequent cubic-to-hexagonal phase transitions in the GST crystalline phase. HT-XRD has been used to map the phases at sequentially higher temperatures, and the results are reconciled with the literature and trends in crystallization temperatures. The results clearly delineate compositions that crystallize to pure GST phases and those that cocrystallize Te. High-throughput measurement of the resistivity of the amorphous and crystalline phases has allowed the compositional and structural correlation of the resistivity contrast associated with the amorphous-to-crystalline transition, which range from 5-to-8 orders of magnitude for the compositions investigated. The results are discussed in terms of the compromises in the selection of these materials for phase change memory applications and the potential for further exploration through more detailed secondary screening of doped GST or similar classes of phase change materials designed for the demands of future memory devices.

中文翻译:

用于数据存储的相变硫属化物薄膜材料的合成与筛选。

基于超高真空下蒸发源的组合合成方法已被用于直接合成室温下宽组成范围内的GeSbTe合金非晶相的组成梯度薄膜库。描述了一种光学屏幕,其允许快速平行地映射非晶相至晶体的相变温度以及与此类库上的相变相关的光学对比度。结果表明与合成文献相符,其中沿Sb2Te3-GeTe键合线可获得公开数据。结果表明,沿着Sb2Te3-Ge2Te3结合线的结晶温度最低,该方法能够解决GST结晶相中随后的立方到六方相变。HT-XRD已被用于在相继较高的温度下绘制相图,其结果与文献资料和结晶温度趋势一致。结果清楚地描述了结晶成纯GST相的成分和使Te共结晶的成分。高通量测量非晶态和晶态相的电阻率已允许与非晶态到晶态转变相关的电阻率对比的成分和结构相关性,对于所研究的成分,其范围为5至8个数量级。
更新日期:2017-06-12
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