Direct growth of graphene films on dielectric substrates (quartz and silica) is reported, by means of remote electron cyclotron resonance plasma assisted chemical vapor deposition r-(ECR-CVD) at low temperature (650°C). Using a two step deposition process- nucleation and growth- by changing the partial pressure of the gas precursors at constant temperature, mostly monolayer continuous films, with grain sizes up to 500 nm are grown, exhibiting transmittance larger than 92% and sheet resistance as low as 900 Ω·sq-1. The grain size and nucleation density of the resulting graphene sheets can be controlled varying the deposition time and pressure. In additon, first-principles DFT-based calculations have been carried out in order to rationalize the oxygen reduction in the quartz surface experimentally observed. This method is easily scalable and avoids damaging and expensive transfer steps of graphene films, improving compatibility with current fabrication technologies.

中文翻译：

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等离子辅助化学气相沉积法在绝缘基板上低温无金属生长石墨烯。

据报道，在低温（650°C）下，通过远程电子回旋共振等离子体辅助化学气相沉积 r-（ECR-CVD）在介电基板（石英和二氧化硅）上直接生长石墨烯薄膜。使用两步沉积工艺——成核和生长——通过在恒温下改变气体前体的分压，生长出晶粒尺寸高达 500 nm 的单层连续薄膜，其透射率大于 92%，薄层电阻低为 900 Ω·sq-1。可以通过改变沉积时间和压力来控制所得石墨烯片的晶粒尺寸和成核密度。此外，已经进行了基于第一原理 DFT 的计算，以使实验观察到的石英表面的氧还原合理化。