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Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se2 solar cells.
Progress in Photovoltaics ( IF 6.7 ) Pub Date : 2014-07-02 , DOI: 10.1002/pip.2527
Bart Vermang 1 , Jörn Timo Wätjen 1 , Viktor Fjällström 1 , Fredrik Rostvall 1 , Marika Edoff 1 , Ratan Kotipalli 2 , Frederic Henry 2 , Denis Flandre 2
Affiliation  

Reducing absorber layer thickness below 500 nm in regular Cu(In,Ga)Se2 (CIGS) solar cells decreases cell efficiency considerably, as both short‐circuit current and open‐circuit voltage are reduced because of incomplete absorption and high Mo/CIGS rear interface recombination. In this work, an innovative rear cell design is developed to avoid both effects: a highly reflective rear surface passivation layer with nano‐sized local point contact openings is employed to enhance rear internal reflection and decrease the rear surface recombination velocity significantly, as compared with a standard Mo/CIGS rear interface. The formation of nano‐sphere shaped precipitates in chemical bath deposition of CdS is used to generate nano‐sized point contact openings. Evaporation of MgF2 coated with a thin atomic layer deposited Al2O3 layer, or direct current magnetron sputtering of Al2O3 are used as rear surface passivation layers. Rear internal reflection is enhanced substantially by the increased thickness of the passivation layer, and also the rear surface recombination velocity is reduced at the Al2O3/CIGS rear interface. (MgF2/)Al2O3 rear surface passivated ultra‐thin CIGS solar cells are fabricated, showing an increase in short circuit current and open circuit voltage compared to unpassivated reference cells with equivalent CIGS thickness. Accordingly, average solar cell efficiencies of 13.5% are realized for 385 nm thick CIGS absorber layers, compared with 9.1% efficiency for the corresponding unpassivated reference cells. © 2014 The Authors. Progress in Photovoltaics: Research and Applications published by John Wiley & Sons Ltd.

中文翻译:

采用硅太阳能电池技术来提高超薄Cu(In,Ga)Se2太阳能电池的效率。

在常规的Cu(In,Ga)Se 2(CIGS)太阳能电池中将吸收剂层厚度减小到500 nm以下会大大降低电池效率,因为由于吸收不完全和较高的Mo / CIGS后部,短路电流和开路电压都降低了接口重组。在这项工作中,开发了一种创新的后电池设计来避免这两种影响:与纳米粒子相比,具有纳米级局部点接触孔的高反射性后表面钝化层被用于增强后内部反射并显着降低后表面复合速度。标准的Mo / CIGS后接口。CdS的化学浴沉积中形成的纳米球形沉淀物用于产生纳米级的点接触孔。MgF 2的蒸发涂覆有薄原子层沉积的Al 2 O 3层的涂层或直流磁控溅射的Al 2 O 3用作背面钝化层。通过增加钝化层的厚度可以大大提高后部内部反射,并且在Al 2 O 3 / CIGS后部界面处后表面复合速度也降低。(MgF 2 /)Al 2 O 3制作了背面钝化的超薄CIGS太阳能电池,与具有相同CIGS厚度的未钝化参比电池相比,其短路电流和开路电压有所增加。因此,对于385nm厚的CIGS吸收层,实现了平均13.5%的太阳能电池效率,而对应的未钝化参考电池的平均效率为9.1%。©2014作者。光伏技术的进展:研究与应用,John Wiley&Sons Ltd.出版。
更新日期:2014-07-02
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