2025-04-03-祝贺成勇的文章被Small接收发表！

Ultralow-power highly-selective near-infrared (~850 nm) carbon nanotube flexible optoelectronics synaptic transistors for real-time trajectory tracking,  Small, 2025, DOI:10.1002/smll.202412324.

Optoelectronic synaptic devices are promising candidate components for brain-like efficient neuromorphic computing systems. The development of highly-selective near-infrared (NIR) optoelectronic synaptic devices is important for realizing more efficient optical computing, night monitoring and robot visual perception. In this work, ultralow-power (56 aJ per light pulse), NIR (~850 nm) highly-selective optoelectronic synaptic transistor devices based on carbon nanotube thin film transistors have been developed by modification of the organic photosensitive material in the device channels. Our optoelectronic synaptic devices showed high sensitivity and selectivity to 850 nm pulse light. It is noted that optoelectronic response currents of our optoelectronic synaptic transistor devices after stimulation by single 850 nm pulse light could be nearly six times higher than those stimulated by single pulse ultraviolet light, which is attributed that IHIC has low bandgap, strong NIR absorption, and ideal energy band alignment with carbon nanotubes. Under pulsed light stimulation, a range of complex synaptic functions were exhibited, including excitatory postsynaptic currents, paired-pulse facilitation, and the transition from short-term plasticity to long-term plasticity, and image perception and memory functions. Significantly, the real-time trajectory tracking of the car by the drone under nighttime conditions was successfully simulated using the designed 4×4 optoelectronic synaptic transistor array.