Min-Cherl JUNG，日本筑波大学 副教授

(Prof. Min-Cherl JUNG , University of Tsukuba)

Dr. Min-Cherl JUNG is an associate professor at Faculty of Pure and Applied Sciences in University of Tsukuba (Japan) from Jan. 2020. He obtained his B.S., M.S, and Ph. D. (Surface Physics for Experiment) at University of Seoul (Republic of Korea) in 1998, 2000, and 2003, respectively. And he carried out his postdoctoral research at Korea Institute of Standard Science from 2003 to 2004. He was a staff scientist (8A1 beamline manager) in Pohang Accelerator Laboratory (POSTECH, Republic of Korea) from 2005 to 2008, a research professor in Univ. of Ulsan (Republic of Korea) from 2008 to 2009, a senior researcher in Samsung Electronics Co. Ltd. (Memory Device Division) from 2009 to 2010, a research assistant professor in POSTECH (Dept. of Physics, Republic of Korea) from 2010 to 2011. And he was a staff scientist of Energy Materials and Surface Sciences Unit at Okinawa Institute of Science and Technology Graduate University (Japan) from 2011 to 2016. From 2016 to 2019, he was an assistant professor at Nara Institute of Science and Technology (Japan). Dr. JUNG's research interests include organic-inorganic hybrid perovskite material analyzed by synchrotron radiation-based techniques, and finding new physical properties and  applications.

Title: Defect Study on Halide Perovskite Materials  

Date: Nov. 4, 2020 (Wednesday)  9: 00

Venue: Room 510, MGI

Absract:

      The exploration of new physical properties for novel device applications requires a deep understanding of the fundamental physical properties, such as the defects, phonon-dispersion relations, and electronic structures. This understanding enables the explanation of and provides the solution for several unexpected behaviors observed in organic-inorganic hybrid perovskite (OHP) based devices, such as material instability, migration of halogen anions, short lifetime in devices, and the bandgap distribution. Although numerous new physical properties of OHP materials have been discovered that have led to improvements in device performance, the phonon-related behavior of these materials, especially in the THz energy range (0.5–3 THz), is yet to be fully understood. In this seminar, I will focus on the defect and its effect in OHP thin film and single crystal to see a possibility for THz-based application.