期刊论文
[14] L. Yang, D. Niu, Y. Zhang, X. Zhao, X. Li, J. Zhu, H. Zhang, Synergistic LPCVD and PECVD Growth of β-Ga2O3 Thin Films for High-Sensitivity and Low-Dose Direct X-Ray Detection, Nanomaterials. 2025, 15(17): 1360.
[13] H. Zhang, D. Niu, J. Yang, X. Zhang, J. Zhu, and W. Li. β-Ga2O3 Thin Films via an Inorganic Sol–Gel Spin Coating: Preparation and Characterization, Nanomaterials. 2025, 15(4): 277.
[12] C. Wu, X. Zhao, Q. Wang, H. Zhang, P. Bai, Domain epitaxial matching of γ-CuI film grown on Al2O3(001) substrate via physical vapor transport, APL Mater. 2024, 12(10): 101119.
[11] J. Liu, H. Deng, X. Zhao, C. Wu, H. Zhang, F. Lang. Investigation of the nano and micromechanical performance of β-Ga2O3 epitaxial films on sapphire using nanoindentation, Vacuum. 2024, 227: 113413.
[10] X. Zhang, X. Zhu, X. Zhao, H. Zhang, W. Chen. Understanding the Thermodynamics of Si and Ge Concentration Variation in SiGeSn Nanowires, Phys. Status Solidi. (A). 2024, 221(23): 2400261( 1–8).
[9] K. Zhang, L. Feng, L. Wang, J. Zhu, H. Zhang, S. Ha, J. Sun, H. Liang, T. Yang. Ga2O3/Ag/Ga2O3-Laminated Film Fabricated at Room Temperature: Toward Applications in Ultraviolet Transparent Highly Conductive Electrodes, Crystals. 2023, 13(7): 1018.
[8] J. Zhu, Z. Xu, S. Ha, D. Li, K. Zhang, H. Zhang, J. Feng. Gallium Oxide for Gas Sensor Applications: A Comprehensive Review, Materials (Basel). 2022, 15(20): 7339.
[7] J. Wu, K. Makihara, H. Zhang, N. Taoka, A. Ohta, S. Miyazaki. Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots, IEICE Trans. Electron. 2022, E105C(10): 616-621.
[6] J. Wu, H. Zhang, H. Furuhata, K. Makihara, M. Ikeda, A. Ohta, S. Miyazaki. Characterization of Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots by Using a Magnetic AFM Probe, ECS Trans. 2020, 98(5): 493
[5] H. Zhang, K. Makihara, M. Ikeda, A. Ohta, S. Miyazaki. High Density Formation and Magnetoelectronic Transport Properties of Fe3Si Nanodots, ECS Trans. 2018, 86(7): 131
[4] H. Zhang, K. Makihara, A. Ohta, M. Ikeda, S. Miyazaki. Formation and characterization of high-density FeSi nanodots on SiO2 induced by remote H2 plasma, Jpn. J. Appl. Phys. 2016, 55(1): 01AE20
[3] R. Fukuoka, K. Makihara, H. Zhang, A. Ohta, T. Kato, S. Iwata, M. Ikeda, S. Miyazaki. High Density Formation of FePt Alloy Nanodots Induced by Remote Hydrogen Plasma and Characterization of their Magnetic Properties, Trans. Mater. Res. Soc. Japan. 2015, 40: 347–350.
[2] A. Ohta, C. Liu, T. Arai, D. Takeuchi, H. Zhang, K. Makihara, S. Miyazaki. Resistance-switching characteristics of Si-rich oxide evaluated by using Ni nanodots as electrodes in conductive AFM measurements, IEICE Trans. Electron. 2015, E98C(5): 406-410.
[1] H. Zhang, R. Fukuoka, Y. Kabeya, K. Makihara, S. Miyazaki. High density formation of iron nanodots on SiO2 induced by remote hydrogen plasma, Adv. Mater. Res. 2013: 1011-1015.
专利：
5. 固态源等离子体增强化学气相沉积设备及方法，张海; 牛鼎元; 赵学平; 杜赵新; 崔晓明，专利号：ZL 202411489122.1
4. 一种纵向堆叠集成的磁性纳米点存储器结构及其制备方法，张海; 牛鼎元; 赵学平; 李新新; 刘飞，专利号：ZL 202411488027.X
3. 氧化镓异质外延薄膜的制备方法，张海; 牛鼎元; 赵学平; 崔晓明; 杨俊彪; 刘全龙， 专利号：ZL 202411354861.X
2. 畴外延生长γ-CuI薄膜的方法及γ-CuI薄膜，赵学平; 吴崇; 张海; 白朴存; 侯小虎; 崔晓明; 刘飞，专利号： ZL 202410218690.1
1. 化学气相沉积管式炉管, 吴春钦; 张海; 李铭; 胡明丹; 庞勍，专利号：ZL202122624067.0