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研究进展 | Phase engineering of GaTe atomic layers
发布时间:2025-04-14

Congrats to Xinyan for his co-first authored paper "Phase Modulation of 2D Semiconducting GaTe from Hexagonal to Monoclinic through Layer Thickness Control and Strain Engineering" being published in Nano Letters!

We colloborated with Prof. Yanfeng Zhang from Peking University in understanding, from a theoretical perspective, the phase engineering of GaTe atomic layers by thickness and local strain. Such phase engineerability should spark new possibilities in realizing novel heterostructures and superlattices.