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樊庆扬 副教授     进组时间: 2018

基本信息

樊庆扬,男,汉族,中共党员,博士,副教授。

教育经历

2008.09-2012.07:西安电子科技大学长安学院,微电子学,理学学士学位

2012.09-2017.12:西安电子科技大学,微电子与固体电子学,工学博士学位

工作经历

2017.12-至今:西安建筑科技大学

科研领域

1. 新型硅锗合金热电材料与器件

2. 新型二维碳基材料

3. 异质结光电器件

4. 二维磁性材料

5. 自旋电子器件

6. 第一性原理计算与分子动力学模拟

科研成果

发表论文

1.       Qingyang Fan,* Wenzhu Zhang, Sining Yun,* Jie Xu, and Yanxing Song, III-Nitride Polymorphs: XN (X=Al, Ga, In) in the Pnma Phase, Chemistry-A European Journal, 2018, 24, 17280 – 17287

2.       Qingyang Fan,* Rui Niu, Wenzhu Zhang, Wei Zhang, Yingchun Ding, and Sining Yun*, t-Si64: A Novel Silicon Allotrope, ChemPhysChem 2019, 20, 128–133

3.       Qingyang Fan*, Jie Xu, Wenzhu Zhang, Yanxing Song, and Sining Yun*, Physical properties of group 14 semiconductor alloys in orthorhombic phase, Journal of Applied Physics, 2019, 126, 045709.

4.         Qing-Yang Fan⁎, Run-Ling Yang, Wei Zhang, Si-Ning Yun⁎, Elastic anisotropy and thermal conductivity of silicon allotropes, Results in Physics, 2019, 15, 102580.

5.       Qingyang Fan⁎, Huiqin Wang, Wenzhu Zhang, Mingfei Wei, Yanxing Song, Wei Zhang, Sining Yun, Si–Ge alloys in C2/c phase with tunable direct band gaps: A comprehensive study, Current Applied Physics 2019, 19, 1325–1333.

6.       Qingyang Fan*, Changchun Chai, et al., Theoretical Investigations of Group IV Alloys in the Lonsdaleite Phase. Journal of Materials Science, 2018, 53, 2785–2801.

7.       Qingyang Fan*, Changchun Chai, et al., Two novel Ge phases and their Si-Ge alloys with excellently electronic and optical properties, Materials & Design, 2017, 132, 539551.

8.       Qingyang Fan, Changchun Chai, Qun Wei, et al., Two novel silicon phases with direct band gaps, Physical Chemistry Chemical Physics, 2016, 18, 12905-12913.

9.       Qingyang Fan, Changchun Chai, et al., Novel silicon allotropes: Stability, mechanical, and electronic properties, Journal of Applied Physics, 2015, 118, 185704.

10.   Qingyang Fan*, Changchun Chai, et al., Two Novel C3N4 Phases: Structural, Mechanical and Electronic Properties, Materials, 2016, 9, 427.

11.   Qingyang Fan*, Changchun Chai, et al., The mechanical and electronic properties of carbon-rich silicon carbide, Materials, 2016, 9, 333.

12.   Qingyang Fan*, Changchun Chai, et al., Si96: A new silicon allotrope with interesting physical properties, Materials, 2016, 9, 284.

13.   Qingyang Fan, Qun Wei, et al., Elastic and electronic properties of Pbca-BN: First-principles calculations, Computational Materials Science, 2014, 85, 80-87.

14.   Qingyang Fan, Qun Wei, Changchun Chai, et al., Elastic and electronic properties of Imm2- and I-4m2-BCN, Computational Materials Science, 2015, 97, 6-13.

15.   Qingyang Fan, Qun Wei, Changchun Chai, et al., Structural, mechanical, and electronic properties of P3m1-BCN, Journal of Physics and Chemistry of Solids, 2015, 79, 89-96.

16.   Qingyang Fan*, Changchun Chai, et al., Mechanical and electronic properties of Si, Ge and their alloys in P42/mnm structure, Materials Science in Semiconductor Processing, 2016, 43, 187–195.

17.   Qingyang Fan, Changchun Chai, Qun Wei, et al., Mechanical and electronic properties of Ca1-xMgxO alloys. Materials Science in Semiconductor Processing, 2015, 40, 676-684.

18.   Qingyang Fan, Changchun Chai, et al., Elastic anisotropy and electronic properties of Si3N4 under pressures. AIP Advances, 2016, 6(8), 文献号: 085207

19.   Qingyang Fan, Changchun Chai, et al., Prediction of novel phase of silicon and Si–Ge alloys, Journal of Solid State Chemistry, 2016, 233, 471–483. (SCI: 000369881200064ESI高被引论文)

20.     Qingyang Fan*, Changchun Chai, et al., A new phase of GaN, Journal of Chemistry, 2016, 8612892.

21.   Qingyang Fan, Qun Wei, Changchun Chai, et al., A new potential superhard phase of OsN2, Acta Physica Polonica A, 2014, 126, 740-746.

22.   Qingyang Fan, Qun Wei, Changchun Chai, et al., Structural, anisotropic and thermodynamic properties of boron carbide: First principles calculations, Indian Journal of Pure & Applied Physics, 2016, 54, 227-235.

23.   Qingyang Fan, Qun Wei, Changchun Chai, et al., The elastic anisotropic and thermodynamic properties of I4mm-B3C, Acta Physica Polonica A, 2016, 129, 103-108.

24.     Qingyang Fan, Qun Wei, Changchun Chai, et al., First-principles study of structural, elastic, anisotropic, and thermodynamic properties of R3-B2C, Chinese Journal of Physics, 2015, 53, 100601.

25.   Qingyang Fan*, Changchun Chai, et al., Thermodynamic, elastic, elastic anisotropy and minimum thermal conductivity of β-GaN under high temperature. Chinese Journal of Physics, 2017, 55(2), 400-411.

26.   Qiankun Wang, Changchun Chai, Qingyang Fan*, et al., Physical Properties of C-Si Alloys in C2/m Structure. Communications in Theoretical Physics, 2017, 68(2), 259-268. (通讯作者)

27.   Yanxing Song, Changchun Chai, Qingyang Fan*, Wei Zhang, and Yintang Yang, Physical properties of Si–Ge alloys in C2/m phase: a comprehensive investigation, Journal of Physics: Condensed Matter, 2019, 31, 255703. (通讯作者)

28.   Wei Zhang, Changchun Chai, Qingyang Fan*, et al. Theoretical investigations of Ge1-xSnx alloys (x = 0, 0.333, 0.667, 1) in P42/ncm phase. Journal of Materials Science, 2018, 53, 9611–9626. (通讯作者)

29.   Chaigang Bai, Changchun Chai, Qingyang Fan*, et al., A novel silicon allotrope in monoclinic      phase. Materials, 2017, 10, 441. (通讯作者)

30.   Chenxi Han, Changchun Chai, Qingyang Fan*, Jionghao Yang, Yintang Yang, Structural, Electronic, and Thermodynamic Properties of Tetragonal t-SixGe3-xN4, Materials, 2018, 11, 397. (通讯作者)

31.   Wei Zhang, Changchun Chai, Yanxing Song, Qingyang Fan *, Yintang Yang, Structural, Mechanical, Anisotropic, and Thermal Properties of AlAs in oC12 and hP6 Phases under Pressure. Materials, 2018, 11, 740. (通讯作者)

32.   Xiangyang Xu, Changchun Chai, Qingyang Fan*, et al., Theoretical prediction of new C–Si alloys in C2/m-20 structure. Chinese Physics B, 2017, 26(4), 046101. (通讯作者)

承担项目

[1] 高热电优值新型硅锗基材料的能带调制、输运性质及性能研究(国家自然科学基金青年基金,618041202019.01-2021.12),在研,主持

[2] 新型碳基二维材料的设计、性能调控及应用探究(中国博士后基金特别资助,2019TQ02432019.07-2021.07),在研,主持

[3] 高热电优值新型笼状硅锗材料的设计、物性研究及性能调制(陕西省高校科协青年人才托举计划,201901102020.01-2021.12),在研,主持

联系方式

通信地址:西安建筑科技大学信息与控制工程学院

陕西省西安市草堂寺景区草寺东路

办公室:信控楼

邮编:710311

电子邮箱:qyfan_xidian@163.com, fanqy@xauat.edu.cn