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研究进展 | 2D transistors with suppressed hysteresis
发布时间:2024-05-13

Congrats to Mingxuan for his accepted paper entitled "In-Plane Ferroelectrics Enabling Reduced Hysteresis in Monolayer MoSTransistors" in Carbon Neutralization.

We show in this paper that in-plane ferroelectric NbOCl2 could be stacked with monolayer MoS2 to suppress the hysteresis in both the output and transfer curves.