Issue 42, 2018

Bipolar magnetism in a two-dimensional NbS2 semiconductor with high Curie temperature

Abstract

Exploring two-dimensional (2D) crystals with intrinsic room-temperature magnetism is of particular importance to develop practical spintronics applications at the nanoscale. Here, we report the electronic and magnetic properties of a freestanding 2D NbS2 crystal on the basis of first-principles calculations. Our results demonstrate that the 2D NbS2 monolayer is a bipolar magnetic semiconductor with a spin bandgap of 0.27 eV by using the screened hybrid density functional HSE06 method. In particular, both electron and hole doping could induce the transition from a bipolar magnetic semiconductor to a half metal in NbS2 nanosheets, where the spin-polarization direction of carriers in half-metallic NbS2 nanosheets can be tuned with the doping type. The Monte Carlo simulation predicts a Curie temperature of over 141 K in the 2D NbS2 crystal, which can be enhanced up to 273 K by hole doping or applying a biaxial tensile strain. These findings imply the great potential of 2D NbS2 nanosheets in nanoscale spintronics applications.

Graphical abstract: Bipolar magnetism in a two-dimensional NbS2 semiconductor with high Curie temperature

Supplementary files

Article information

Article type
Paper
Submitted
22 Aug 2018
Accepted
30 Sep 2018
First published
01 Oct 2018

J. Mater. Chem. C, 2018,6, 11401-11406

Bipolar magnetism in a two-dimensional NbS2 semiconductor with high Curie temperature

Y. Sun, Z. Zhuo and X. Wu, J. Mater. Chem. C, 2018, 6, 11401 DOI: 10.1039/C8TC04188A

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