High-quality β-(AlxGa1−x)2O3 thin films on sapphire substrates by face-to-face annealing

Songhao Wu; Chicheng Ma; Han Yang; Zichun Liu; Yuanxiao Ma; Ran Yao; Yiyun Zhang; Hua Yang; Xiaoyan Yi; Junxi Wang; Yeliang Wang

doi:10.1039/D4CE00263F

High-quality β-(Al_xGa_1−x)₂O₃ thin films on sapphire substrates by face-to-face annealing†

Songhao Wu,^ab Chicheng Ma,^bc Han Yang,^ab Zichun Liu,^ab Yuanxiao Ma,*^a Ran Yao,^bc Yiyun Zhang,

*^bc Hua Yang,^bc Xiaoyan Yi,^bc Junxi Wang^bc and Yeliang Wang*^a

Author affiliations

* Corresponding authors

^a The School of Integrated Circuits and Electronics and Yangtze Delta Region Academy, Beijing Institute of Technology, Beijing 100081, China
E-mail: yxma@bit.edu.cn, yeliang.wang@bit.edu.cn

^b R&D Center for Solid-state Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
E-mail: yyzhang@semi.ac.cn

^c Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Abstract

High-quality β-(Al_xGa_1−x)₂O₃ thin films are fabricated through face-to-face annealing on sapphire substrates covered with epitaxial Ga₂O₃. Al atoms during high-temperature annealing are uniformly diffused from the sapphire substrate into the overlying Ga₂O₃ for (Al_xGa_1−x)₂O₃ formation. The transformation of the (−201) crystal facet into the (300) crystal facet is observed, which is likely due to the lowest E^(hkl)_surf of the (100) surface. The crystallinity can be further improved with increasing the annealing temperatures and the duration of the thermal treatment under a tolerance limit of 1400 °C, which also increases the Al content to 0.68 in β-(Al_xGa_1−x)₂O₃ with a bandgap of up to 6.0 eV. As a result, highly-crystalline (300)-plane β-(Al_xGa_1−x)₂O₃ is obtained with a low X-ray diffraction (XRD) full width at half maximum (FWHM) at around 0.08° (288 arcsec). These findings contribute to the understanding of the preparation of high-quality β-(Al_xGa_1−x)₂O₃ films on sapphire substrates.

CrystEngComm

High-quality β-(Al_xGa_1−x)₂O₃ thin films on sapphire substrates by face-to-face annealing†

Abstract

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High-quality β-(Al_xGa_1−x)₂O₃ thin films on sapphire substrates by face-to-face annealing

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