Homochirality to design high-Tc lead-free ferroelastic semiconductors

Abstract

Ferroelastic semiconductor materials have garnered significant research interest due to their promising applications in the fields of shape memory, superelasticity, templated electronic nanostructures, mechanical switching, and optoelectronic transmission. However, the toxicity of lead-based structures and low phase-transition temperature (Tc) greatly constrain the application scenarios of ferroelastic semiconductors. Here, using an H/OH-substitution-induced homochiral strategy, we synthesize a pair of lead-free ferroelastic semiconductors (R/S-CTA)2SbCl5 (CTA = 3-chloro-2-hydroxypropyltrimethyllammonium) having semiconductor properties with an indirect bandgap of 3.41 eV. They crystallized in the chiral space group P212121 at room temperature, and both undergo 422F222 type ferroelastic phase transitions with Tc up to 410 K, accompanied by a large entropy change of 68.75 and 66.09 J mol−1 K−1, respectively. Owing to the introduction of chirality, they exhibited temperature-dependent nonlinear second-harmonic generation (SHG) properties. Relatively, the achiral TMCP (TMCP = N,N,N-trimethylchloropropylamine) makes the phase transition properties of centrosymmetric TMCP2SbCl5 ordinary compared to chiral R/S-pair. This is precisely the main starting point of homochiral strategies in phase transition and optical structure research, while arousing research interest. This work, which provides a new avenue for the design of high-Tc lead-free ferroelastic semiconductor compounds, is a powerful motivation for the realization of multifunctional materials related to chirality.

Graphical abstract: Homochirality to design high-Tc lead-free ferroelastic semiconductors

Supplementary files

Article information

Article type
Paper
Submitted
30 Jan 2024
Accepted
01 Apr 2024
First published
02 Apr 2024
This article is Open Access
Creative Commons BY-NC license

J. Mater. Chem. C, 2024, Advance Article

Homochirality to design high-Tc lead-free ferroelastic semiconductors

B. Deng, Z. Rao, M. Shen, K. Liang, Y. Zhu, Z. Wang, K. Ding, C. Su, M. Lun, Z. Zhang, Y. Zhang and D. Fu, J. Mater. Chem. C, 2024, Advance Article , DOI: 10.1039/D4TC00428K

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