Photocarrier Transfer across Monolayer MoS2 –MoSe2 Lateral Heterojunctions

Bellus, Matthew Z.; Mahjouri-Samani, Masoud; Lane, Samuel D.; Oyedele, Akinola D.; Li, Xufan; Puretzky, Alexander A.; Geohegan, David; Xiao, Kai; Zhao, Hui

doi:10.1021/acsnano.8b02843

Title: Photocarrier Transfer across Monolayer MoS₂ –MoSe₂ Lateral Heterojunctions

Journal Article · Fri Jun 15 00:00:00 EDT 2018 · ACS Nano

DOI:https://doi.org/10.1021/acsnano.8b02843· OSTI ID:1528725

Bellus, Matthew Z. ^[1];

^[2]; Lane, Samuel D. ^[1];

^[3];

^[4];

^[5];

^[4];

^[1]

Univ. of Kansas, Lawrence, KS (United States). Dept. of Physics and Astronomy
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS); Auburn Univ., AL (United States). Electrical and Computer Engineering
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS); Univ. of Tennessee, Knoxville, TN (United States). Bredesen Center for Interdisciplinary Research and Graduate Education
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)
Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States

In-plane heterojuctions formed from two monolayer semiconductors represent the finest control of electrons in condensed matter and have attracted significant interest. Various device studies have shown the effectiveness of such structures to control electronic processes, illustrating their potentials for electronic and optoelectronic applications. However, information about the physical mechanisms of charge carrier transfer across the junctions is still rare, mainly due to the lack of adequate experimental techniques. Here we show that transient absorption measurements with high spatial and temporal resolution can be used to directly monitor such transfer processes. We studied MoS₂–MoSe₂ in-plane heterostructures fabricated by chemical vapor deposition and lithographic patterning followed by laser-generated vapor sulfurization. Transient absorption measurements in reflection geometry revealed evidence of exciton transfer from MoS₂ to MoSe₂. By comparing the experimental data with a simulation, we extracted an exciton transfer velocity of 10⁴ m ^s–1. These results provide valuable information for understanding and controlling in-plane carrier transfer in two-dimensional lateral heterostructures for their electronic and optoelectronic applications.

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Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1528725

Journal Information:: ACS Nano, Vol. 12, Issue 7; ISSN 1936-0851

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 20 works

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37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
van der Waals interface
transition metal dichalcogenide
electron transfer
transient absorption
two-dimensional material

Title: Photocarrier Transfer across Monolayer MoS2 –MoSe2 Lateral Heterojunctions

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Title: Photocarrier Transfer across Monolayer MoS₂ –MoSe₂ Lateral Heterojunctions