Abstract In this study, Fe83Ga17 thin films are deposited on Si(1 0 0) and Si(1 1 1) substrates with a Ti layer by using DC magnetron sputtering. The addition of Ti layer does not significantly change the magnetic and magnetostrictive properties of the Fe-Ga film, however it can effectively prevent the abscission of film during heat treatment. The Fe83Ga17 films deposited on Si(1 0 0) and Ti/Si(1 0 0) have relatively small coercive forces, low saturation magnetic fields, and the magnetostriction curves are easily saturated in a low field. The magnetostriction of Fe83Ga17 on Ti/Si(1 0 0) can reach 105 ppm. The Fe83Ga17 thin films on Si(1 1 1) and Ti/Si(1 1 1) have large saturation magnetic fields (about 61Oe) and the magnetostriction curve shows linearity, which can be used in magnetic field detection, micro actuators and magnetoelectric (ME) devices. Dendritic domains and stripe domains are observed in these samples due to the influence of different internal stresses. After a vacuum heat treatment, the internal stress was released. At the same time, the structure of both the dendritic domains and stripe domains turns into a dot domain. The EBSD results show that annealed Fe-Ga films sputtered on a Ti layer have a very weak texture.

中文翻译：

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具有 Ti 粘附层的 Fe83Ga17 薄膜的结构、磁性和磁致伸缩特性

摘要 本研究采用直流磁控溅射技术在具有Ti层的Si(1 0 0)和Si(1 1 1)衬底上沉积Fe83Ga17薄膜。Ti层的加入不会显着改变Fe-Ga薄膜的磁性和磁致伸缩性能，但可以有效防止热处理过程中薄膜的脱落。沉积在Si(1 0 0)和Ti/Si(1 0 0)上的Fe83Ga17薄膜矫顽力较小，饱和磁场低，在低磁场下磁致伸缩曲线容易饱和。Fe83Ga17在Ti/Si(1 0 0)上的磁致伸缩可达105 ppm。Si(1 1 1)和Ti/Si(1 1 1)上的Fe83Ga17薄膜饱和磁场大（约61Oe），磁致伸缩曲线呈线性，可用于磁场检测，微执行器和磁电 (ME) 设备。由于不同内应力的影响，在这些样品中观察到树突域和条纹域。真空热处理后，释放内应力。同时，树突域和条纹域的结构都变成了点域。EBSD 结果表明溅射在 Ti 层上的退火 Fe-Ga 薄膜具有非常弱的织构。