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Controlling the Zinc Oxide Unipolarity through Dual Acceptor Doping for Spray-cast Homojunction Diode
Materials Letters ( IF 3 ) Pub Date : 2019-03-01 , DOI: 10.1016/j.matlet.2018.11.157
Sebin Devasia , P.V. Athma , E.I. Anila

Abstract Dual acceptors, Phosphorous and Nitrogen, were simultaneously doped into zinc oxide crystallite structure for achieving stable p-type conductivity through simple spray pyrolysis technique. Doping concentration was varied from 0 to 1.25 at% in steps of 0.25. The structural, morphological, optical and electronic properties were investigated for phosphorous and nitrogen doped ZnO (NPZO) samples. Furthermore, the optimized p-type film was used for fabricating homojunction with aluminium doped n-type layer (AZO) which was also deposited using spray pyrolysis. The IV characteristics shows the diode behavior of the created homojunction from which the ideality factor was calculated to be 3.16.

中文翻译:

通过喷射浇铸同质结二极管的双受体掺杂控制氧化锌单极性

摘要 双受体磷和氮同时掺杂到氧化锌微晶结构中,通过简单的喷雾热解技术实现稳定的 p 型电导率。掺杂浓度以 0.25 的步长从 0 到 1.25 原子%变化。研究了磷和氮掺杂的 ZnO (NPZO) 样品的结构、形态、光学和电子特性。此外,优化的 p 型薄膜用于制造具有铝掺杂 n 型层 (AZO) 的同质结,该层也使用喷雾热解沉积。IV 特性显示了所创建的同质结的二极管行为,由此计算出的理想因子为 3.16。
更新日期:2019-03-01
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