Doped lead halide perovskite nanocrystals (NCs) have garnered significant attention due to their superior optoelectronic properties. Here, we report a synthesis of Cd-doped CsPbCl₃ NCs by decoupling Pb- and Cl-precursors in a hot injection method. The resulting Cd-doped perovskite NCs manifest a dual-wavelength emission profile with the first reported example of Cd-dopant emission. By controlling Cd-dopant concentration, the emission profile can be tuned with a dopant emission quantum yield of up to 8%. A new secondary emission (∼610 nm) is induced by an energy transfer process from photoexcited hosts to Cd-dopants and a subsequent electronic transition from the excited state (³E_g) to the ground state (¹A_1g) of [CdCl₆]^4– units. This electronic transition matches well with a first-principles density functional theory calculation. Further, the optical behavior of Cd-doped CsPbCl₃ NCs can be altered through postsynthetic anion-exchange reactions. Our studies present a new model system for doping chemistry studies in semiconductors for various optoelectronic applications.

中文翻译：

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双波长发射全无机掺镉CsPbCl ₃钙钛矿纳米晶体的合成

掺杂的卤化铅钙钛矿纳米晶体（NCs）由于其优异的光电性能而受到了广泛的关注。在这里，我们报告通过热注射法中的Pb和Cl前体去耦来合成Cd掺杂的CsPbCl ₃ NC。所得的Cd掺杂钙钛矿NCs表现出双波长发射曲线，并且首次报道了Cd掺杂剂发射的例子。通过控制Cd掺杂剂浓度，可以以高达8％的掺杂剂发射量子产率调节发射曲线。从光激发的主体到Cd掺杂物的能量转移过程以及随后的从激发态（³ E _g）到基态（¹ A _1g）的电子跃迁引起了新的二次发射（〜610 nm）。）的[CdCl ₆ ] ^{4 –}单位。这种电子跃迁与第一原理密度泛函理论计算非常吻合。此外，可以通过合成后的阴离子交换反应改变掺杂Cd的CsPbCl ₃ NC的光学行为。我们的研究提出了一种用于各种光电子应用中的半导体中掺杂化学研究的新模型系统。