Ba_0.5Sr_0.5TiO₃/CaCu₃Ti₄O₁₂ (BST/CCTO) multilayers with different stack sequences were deposited on LaNiO₃(LNO)/SiO₂/Si substrates by a sol-gel process. The dielectric properties of BST/CCTO multilayers are significantly affected by the deposition sequence, the layer thickness and the impurities, effects that are interpreted using the Maxwell-Wagner interfacial polarization model. Impurities are generated by elemental interdiffusion at the interfaces of BST/CCTO, and less at the interfaces of BST/LNO and CCTO/LNO. The dielectric permittivity of the CCTO/BST/LNO/SiO₂/Si sample reaches 352,200 at 10 kHz, and stabilizes above 20,000 in the range of 100 kHz to 1 MHz. This work demonstrates an effective approach to enhance dielectric properties for film capacitor applications by constructing multilayers with specific deposition sequences and layer thicknesses.

通过溶胶-凝胶法将具有不同堆叠顺序的Ba _0.5 Sr _0.5 TiO ₃ / CaCu ₃ Ti ₄ O ₁₂（BST / CCTO）多层膜沉积在LaNiO ₃（LNO）/ SiO ₂ / Si衬底上。BST / CCTO多层膜的介电性能受沉积顺序，层厚和杂质的影响很大，这些影响可以通过麦克斯韦-瓦格纳界面极化模型来解释。杂质是由BST / CCTO界面处的元素相互扩散产生的，而较少发生于BST / LNO和CCTO / LNO界面处的杂质扩散。CCTO / BST / LNO / SiO _2的介电常数/ Si样品在10 kHz时达到352,200，并在100 kHz至1 MHz的范围内稳定在20,000以上。这项工作展示了一种通过构建具有特定沉积顺序和层厚度的多层膜来增强薄膜电容器应用介电性能的有效方法。