Abstract A SiC ceramic membrane was successfully fabricated at 2200 °C by a co-sintering process through the addition of B4C powder. The support and membrane with a pore size of 34.92 µm and 9.93 µm were prepared with coarse SiC powder (~120 µm) and spheroidized SiC powder (~22 µm), respectively. The interface between the support and membrane was distinct and particles were closely bonded to each other. The addition of 1.5 wt% B4C can decrease the sintering temperature of support from 2350 to 2200 °C, which had a good match with that of membrane. The mechanism for promoting the sintering of support is that B4C dissolved into the SiC lattice and increased the crystal defects. The bending strength of the support and the membrane was 38.77 MPa and 32.15 MPa, respectively. The nitrogen gas flux and gas permeability of the SiC ceramic membrane was 19,406 m3/m2 h bar and 5.817 × 10–12 m2.

中文翻译：

---

B4C对SiC陶瓷膜共烧结的影响

摘要 通过添加 B4C 粉末，通过共烧结工艺在 2200 °C 下成功制备了 SiC 陶瓷膜。孔径为 34.92 µm 和 9.93 µm 的载体和膜分别用粗 SiC 粉末 (~120 µm) 和球化 SiC 粉末 (~22 µm) 制备。载体和膜之间的界面是明显的，并且颗粒彼此紧密结合。添加1.5 wt% B4C可使载体的烧结温度从2350℃降低到2200℃，与膜的烧结温度具有良好的匹配性。促进载体烧结的机制是 B4C 溶解到 SiC 晶格中并增加了晶体缺陷。支撑体和膜的弯曲强度分别为 38.77 MPa 和 32.15 MPa。SiC陶瓷膜的氮气通量和气体渗透率为19，