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Large Pockels effect in micro- and nanostructured barium titanate integrated on silicon
Nature Materials ( IF 41.2 ) Pub Date : 2018-11-12 , DOI: 10.1038/s41563-018-0208-0
Stefan Abel , Felix Eltes , J. Elliott Ortmann , Andreas Messner , Pau Castera , Tino Wagner , Darius Urbonas , Alvaro Rosa , Ana M. Gutierrez , Domenico Tulli , Ping Ma , Benedikt Baeuerle , Arne Josten , Wolfgang Heni , Daniele Caimi , Lukas Czornomaz , Alexander A. Demkov , Juerg Leuthold , Pablo Sanchis , Jean Fompeyrine

The electro-optical Pockels effect is an essential nonlinear effect used in many applications. The ultrafast modulation of the refractive index is, for example, crucial to optical modulators in photonic circuits. Silicon has emerged as a platform for integrating such compact circuits, but a strong Pockels effect is not available on silicon platforms. Here, we demonstrate a large electro-optical response in silicon photonic devices using barium titanate. We verify the Pockels effect to be the physical origin of the response, with r42 = 923 pm V−1, by confirming key signatures of the Pockels effect in ferroelectrics: the electro-optic response exhibits a crystalline anisotropy, remains strong at high frequencies, and shows hysteresis on changing the electric field. We prove that the Pockels effect remains strong even in nanoscale devices, and show as a practical example data modulation up to 50 Gbit s−1. We foresee that our work will enable novel device concepts with an application area largely extending beyond communication technologies.



中文翻译:

硅上集成的微米和纳米结构钛酸钡的大普克尔效应

电光普克尔斯效应是许多应用中必不可少的非线性效应。折射率的超快调制例如对于光子电路中的光学调制器至关重要。硅已经成为集成此类紧凑电路的平台,但是在硅平台上没有强大的普克尔斯效应。在这里,我们展示了使用钛酸钡的硅光子器件中的大电光响应。我们证明普克尔斯效应是响应的物理来源,其中r 42  = 923 pm V -1,通过确认铁电体中普克尔斯效应的关键特征:电光响应表现出晶体各向异性,在高频下仍保持强势,并且在改变电场时显示出滞后现象。我们证明,即使在纳米级设备中,普克尔斯效应仍然保持很强的性能,并以高达50 Gbit s -1的数据调制作为实际示例。我们预见到,我们的工作将使新颖的设备概念得以实现,其应用领域将大大超越通信技术。

更新日期:2018-12-10
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