Ion track formation in amorphous SiO₂ was investigated using infrared spectroscopy. For comparison, one set of samples was also irradiated using 1.25 MeV gamma rays. An increase of 1044 cm⁻¹ peak and decrease of 1078 cm⁻¹ peak was observed in all cases. Experimental results were analysed using an analytical thermal spike model and non-standard model parameters were found. This finding is attributed to the amorphous structure of the material.

中文翻译：

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红外光谱在无定形SiO _2中的离子迹线，并与伽马辐照引起的变化进行比较

使用红外光谱研究了非晶SiO _2中的离子轨迹形成。为了进行比较，还使用1.25 MeV伽马射线辐照了一组样品。在所有情况下均观察到了1044 cm ^-1峰的增加和1078 cm ^-1峰的减少。使用分析性热尖峰模型分析了实验结果，发现了非标准模型参数。该发现归因于材料的无定形结构。