Semi-conductive alumina/nano-carbon ceramic composite with high hole mobility is fabricated by gel-casting and reductive sintering. The hole mobility observed in the fabricated composite is 80-fold higher than the previously reported alumina/graphene composite. Such superior semi-conductive performance of the alumina/nano-carbon composite can be attributed to the homogenous electrically conductive path induced by nano-carbon with well-controlled graphite structure formed during fabrication process. In addition, the influence of sintering temperature on the structure of nano-carbon as well as its relation to the semi-conductive properties of composite are systemically investigated.

通过凝胶浇铸和还原烧结制备具有高空穴迁移率的半导体氧化铝/纳米碳陶瓷复合材料。在制造的复合材料中观察到的空穴迁移率比以前报道的氧化铝/石墨烯复合材料高80倍。氧化铝/纳米碳复合材料的这种优越的半导电性能可以归因于在制造过程中形成的具有良好控制的石墨结构的纳米碳引起的均匀导电路径。此外，系统地研究了烧结温度对纳米碳结构的影响及其与复合材料的半导电性能的关系。