The amorphous Sn_1-xFe_xO₂ films deposited at room temperature by magnetron sputtering were annealed in air and Ar respectively, and the saturation magnetization of Sn_1-xFe_xO₂ films annealed in Ar is much higher than the samples annealed in air. Crystallized Sn_1-xFe_xO₂ films were obtained at the deposition temperature above 570 °C, which exhibited remarkable room-temperature ferromagnetism and magnetic anisotropy. The Sn_1-xFe_xO₂ films have largest saturation magnetic moment of 0.255 μ_B/Fe at x=0.033. In addition, Sn_1-xFe_xO₂ nanostructure arrays were produced by glancing angle sputter deposition. The Sn_1-xFe_xO₂ nanostructure arrays possess larger atomic magnetic moment, which is 0.561μ_B/Fe (x=0.059), compared with the flat films.

通过磁控溅射在室温下沉积的非晶Sn _1-x Fe _x O ₂膜分别在空气和Ar中退火，并且在Ar中退火的Sn _1-x Fe _x O ₂膜的饱和磁化强度远高于退火后的样品。在空中。在高于570°C的沉积温度下获得了结晶的Sn _1-x Fe _x O ₂膜，该膜表现出显着的室温铁磁性和磁各向异性。Sn的_1-X的Fe _X Ò ₂膜具有0.255的最大饱和磁矩μ_乙/ Fe在x = 0.033。另外，通过掠射角溅射沉积制备了Sn _1-x Fe _x O ₂纳米结构阵列。Sn的_1-X的Fe _X Ò ₂纳米结构阵列具有较大的原子磁矩，这是0.561 μ_乙/铁（X = 0.059），与平坦膜相比。