We demonstrate a high-speed chemical vapor deposited graphene-on-silicon nitride waveguide photodetector. The device is designed with grating-like metal contact to reduce the channel spacing. Benefiting from the narrow channel spacing, a calculated transit-time-limited bandwidth of 111 GHz is derived. The resistance–capacitance-limited bandwidth is also improved due to the small relative permittivity of silicon nitride. At a wavelength of 1550 nm, we measured an electro-optic bandwidth of 38 GHz under zero bias and an intrinsic responsivity of 13 mA W⁻¹ at 0.1 V reverse bias with a 6 μm detection length.

中文翻译：

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具有38 GHz带宽的氮化硅波导集成化学气相沉积石墨烯光电探测器†

我们演示了一个高速化学气相沉积石墨烯在氮化硅上的波导光电探测器。该设备设计有类似格栅的金属触点，以减小通道间距。得益于狭窄的信道间隔，可以得出计算出的111 GHz的穿越时间限制带宽。由于氮化硅的相对介电常数较小，因此电阻电容限制的带宽也得到了改善。在1550 nm的波长下，我们在零偏压下测量了38 GHz的电光带宽，在0.1 V反向偏压下以6μm的检测长度测量了13 mA W ^-1的本征响应度。