Expected for many promising applications in the field of electronics and optoelectronics, a reliable method for the characterization of graphene electrical transport properties is desired to predict its device performance or provide feedback for its synthesis. However, the commonly used methods of extracting carrier mobility from graphene field effect transistor or Hall-bar is time consuming, expensive, and significantly affected by the device fabrication process other than graphene itself. Here we reported a general and simple method to evaluate the electrical transport performance of graphene by the van der Pauw–Hall measurement. By annealing graphene in vacuum to remove the adsorbed dopants and then exposing it in ambient surroundings, carrier mobility as a function of density can be measured with the increase of carrier density due to the dopant re-adsorption from the surroundings. Further, the relationship between the carrier mobility and density can be simply fitted with a power equation to the first level approximation, with which any pair of measured carrier mobility and density can be normalized to an arbitrary carrier density for comparison. We experimentally demonstrated the reliability of the method, which is much simpler than making devices and may promote the standard making for graphene characterization.

预计在电子和光电子领域有许多有前途的应用，需要一种可靠的方法来表征石墨烯的电传输特性，以预测其器件性能或为其合成提供反馈。然而，从石墨烯场效应晶体管或霍尔杆中提取载流子迁移率的常用方法耗时、昂贵，并且受石墨烯本身以外的器件制造工艺的显着影响。在这里，我们报告了一种通用且简单的方法，通过 van der Pauw-Hall 测量来评估石墨烯的电传输性能。通过在真空中退火石墨烯以去除吸附的掺杂剂，然后将其暴露在周围环境中，载流子迁移率作为密度的函数可以通过载流子密度的增加来测量，因为掺杂剂从周围环境中重新吸附。此外，载流子迁移率和密度之间的关系可以简单地用幂方程拟合到一级近似，用它可以将任何一对测量的载流子迁移率和密度归一化为任意载流子密度以进行比较。我们通过实验证明了该方法的可靠性，这比制造设备简单得多，并且可以促进石墨烯表征的标准制定。任何一对测量的载流子迁移率和密度都可以归一化为任意载流子密度以进行比较。我们通过实验证明了该方法的可靠性，这比制造设备简单得多，并且可以促进石墨烯表征的标准制定。任何一对测量的载流子迁移率和密度都可以归一化为任意载流子密度以进行比较。我们通过实验证明了该方法的可靠性，这比制造设备简单得多，并且可以促进石墨烯表征的标准制定。