A DUV-LED with a graded superlattice electron blocking layer (GSL-EBL) is demonstrated to show improved carrier injection into the multi-quantum well region. The structures of modified EBLs are designed via simulation. The simulation results show the carrier behavior mechanism of DUV-LEDs with a single EBL (S-EBL), graded EBL (G-EBL), and GSL-EBL. The variation in the energy band diagram around the EBL region indicates that the introduction of GSL-EBL is very effective in enhancing carrier injection. Besides, all DUV-LEDs emitting at 280 nm are grown in the high temperature metal organic chemical deposition system. It is confirmed that the optical power of the DUV-LED with the GSL-EBL is significantly higher than that of the DUV-LED with the S-EBL and G-EBL.

中文翻译：

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具有渐变超晶格电子阻挡层的 AlGaN 基深紫外发光二极管的改进载流子注入

具有渐变超晶格电子阻挡层 (GSL-EBL) 的 DUV-LED 显示出改进的载流子注入到多量子阱区域。修改后的 EBL 的结构是通过仿真设计的。仿真结果显示了具有单个 EBL (S-EBL)、渐变 EBL (G-EBL) 和 GSL-EBL 的 DUV-LED 的载流子行为机制。EBL区域周围能带图的变化表明GSL-EBL的引入在增强载流子注入方面非常有效。此外，所有在 280 nm 发射的 DUV-LED 均在高温金属有机化学沉积系统中生长。经证实，采用 GSL-EBL 的 DUV-LED 的光功率明显高于采用 S-EBL 和 G-EBL 的 DUV-LED。