Abstract To produce high performance optoelectronic devices, ternary alloys prepared by indium (In), antimony (Sb), tin (Sn) and sulphur (S), the InxSn1−xS2 and SbxSn1−xS2 (x = 0, 0.05, 0.15), are exploited for their application in moderately fast photodetection. The single crystals of InxSn1−xS2 and SbxSn1−xS2 (x = 0, 0.05, 0.15) alloys are grown by direct vapour transport technique. The photodetectors based on single crystals are examined for 670 nm illumination having power intensity of 3 mW/cm2. For quantitative analysis, the typical detector parameters such as photo-responsivity, specific detectivity and external quantum efficiency are calculated. The improvement in photodetection with significantly enhanced detector parameters and fast a response is realized due to doping in SnS2. The highest responsivity of 15.48 mA/W with response time of 240 ms is achieved in Sb0.15Sn0.85S2 alloy. The present findings of enhanced photodetection due to alloy engineering can be of great advantage in intended applications of these compounds in the field of optoelectronics.

中文翻译：

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合金工程以促进 InxSn1-xS2 和 SbxSn1-xS2 三元合金中的光电检测

摘要 为了生产高性能光电器件，由铟 (In)、锑 (Sb)、锡 (Sn) 和硫 (S) 制备的三元合金 InxSn1−xS2 和 SbxSn1−xS2 (x = 0, 0.05, 0.15)，被用于它们在中等速度的光电检测中的应用。InxSn1-xS2 和 SbxSn1-xS2 (x = 0, 0.05, 0.15) 合金的单晶是通过直接蒸汽传输技术生长的。检查基于单晶的光电探测器的 670 nm 照明，功率强度为 3 mW/cm2。对于定量分析，计算典型的检测器参数，例如光响应度、比检测率和外量子效率。由于在 SnS2 中掺杂，实现了具有显着增强的探测器参数和快速响应的光电探测的改进。最高响应度 15。Sb0.15Sn0.85S2 合金达到 48 mA/W，响应时间为 240 ms。由于合金工程而增强的光电检测的当前发现在这些化合物在光电子领域的预期应用中具有很大的优势。