Atomic thin transition‐metal dichalcogenides (TMDs) are considered as an emerging platform to build next‐generation semiconductor devices. However, to date most devices are still based on exfoliated TMD sheets on a micrometer scale. Here, a novel chemical vapor deposition synthesis strategy by introducing multilayer (ML) MoS₂ islands to improve device performance is proposed. A four‐probe method is applied to confirm that the contact resistance decreases by one order of magnitude, which can be attributed to a conformal contact by the extra amount of exposed edges from the ML‐MoS₂ islands. Based on such continuous MoS₂ films synthesized on a 2 in. insulating substrate, a top‐gated field effect transistor (FET) array is fabricated to explore key metrics such as threshold voltage (V _T) and field effect mobility (μ_FE) for hundreds of MoS₂ FETs. The statistical results exhibit a surprisingly low variability of these parameters. An average effective μ_FE of 70 cm² V⁻¹ s⁻¹ and subthreshold swing of about 150 mV dec⁻¹ are extracted from these MoS₂ FETs, which are comparable to the best top‐gated MoS₂ FETs achieved by mechanical exfoliation. The result is a key step toward scaling 2D‐TMDs into functional systems and paves the way for the future development of 2D‐TMDs integrated circuits.

中文翻译：

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高性能晶圆级MoS2晶体管在实际应用中的应用

原子薄的过渡金属二硫化碳（TMD）被认为是构建下一代半导体器件的新兴平台。然而，迄今为止，大多数设备仍基于微米级的剥落的TMD薄板。在此，提出了一种通过引入多层（ML）MoS ₂岛来改善器件性能的新型化学气相沉积合成策略。应用四探针方法来确认接触电阻降低一个数量级，这可以归因于ML-MoS ₂岛中多余边缘的额外接触，从而形成了共形接触。基于这种连续的MoS ₂在2英寸绝缘基板上合成薄膜后，制造了一个顶部栅极场效应晶体管（FET）阵列，以探索关键指标，例如数百个MoS ₂ FET的阈值电压（V _T）和场效应迁移率（_μFE）。统计结果显示出这些参数的出乎意料的低可变性。从这些MoS ₂ FET中提取了70 cm ² V ^-1 s ^-1的平均有效_μFE和约150 mV dec ^-1的亚阈值摆幅，与最佳的门控MoS ₂相当通过机械剥离实现的FET。结果是朝着将2D-TMD扩展到功能系统的关键一步，为2D-TMD集成电路的未来发展铺平了道路。