PbS₂ and Pb_0.9Ag_0.1S₂ were prepared through the reaction of PbS with excess sulfur (and silver) at 4 GPa and 600 °C. PbS₂ crystallizes in the CuAl₂ structure type, (I4/mcm (#140), a = 6.1106(5) Å, c = 7.4949(6) Å, Z = 4), determined by single crystal X-ray diffraction. Its structure consists of layers of [S₂]^2- dimers and Pb²⁺ in square antiprismatic coordination - a rare structure type for metal dichalcogenides. Electronic structure calculations suggest that the material should be an indirect band gap semiconductor. Consistent with the calculations, the temperature-dependent resistivity of undoped PbS₂ is that of a degenerate semiconductor, while the Ag-doped material shows metallic temperature dependent resistivity down to 2 K. The materials are both diamagnetic. For the Ag-doped material, the Seebeck coefficient is small and shows nearly linear temperature-dependent behavior from 50 to 250 K.

通过在4 GPa和600 °C下PbS与过量的硫（和银）反应制备PbS ₂和Pb _0.9 Ag _0.1 S ₂。通过单晶X射线衍射测定，PbS ₂结晶为CuAl ₂结构类型（I 4 / mcm（＃140），a = 6.1106（5）Å，c = 7.4949（6）Å，Z = 4）。其结构由[S ₂ ] ^2-二聚体和Pb ²⁺层组成  在方形反棱柱形配位中-一种金属二卤化物的罕见结构类型。电子结构计算表明该材料应为间接带隙半导体。与计算一致的是，未掺杂的PbS ₂的温度相关电阻率是退化的半导体的电阻率，而掺Ag的材料显示出低至2  K的金属温度相关电阻率。这两种材料都是抗磁性的。对于掺Ag的材料，塞贝克系数很小，并且在50至250  K范围内表现出几乎线性的温度相关行为。