当前位置: X-MOL 学术Adv. Mater. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Highly In‐Plane Anisotropic 2D GeAs2 for Polarization‐Sensitive Photodetection
Advanced Materials ( IF 29.4 ) Pub Date : 2018-10-14 , DOI: 10.1002/adma.201804541
Liang Li 1, 2 , Penglai Gong 3 , Daopeng Sheng 4 , Shuao Wang 4 , Weike Wang 5 , Xiangde Zhu 6 , Xingqiang Shi 3 , Fakun Wang 1 , Wei Han 1 , Sanjun Yang 1 , Kailang Liu 1 , Huiqiao Li 1 , Tianyou Zhai 1
Affiliation  

Due to the intriguing anisotropic optical and electrical properties, low‐symmetry 2D materials are attracting a lot of interest both for fundamental studies and fabricating novel electronic and optoelectronic devices. Identifying new promising low‐symmetry 2D materials will be rewarding toward the evolution of nanoelectronics and nano‐optoelectronics. In this work, germanium diarsenide (GeAs2), a group IV–V semiconductor with novel low‐symmetry puckered structure, is introduced as a favorable highly anisotropic 2D material into the rapidly growing 2D family. The structural, vibrational, electrical, and optical in‐plane anisotropy of GeAs2 is systematically investigated both theoretically and experimentally, combined with thickness‐dependent studies. Polarization‐sensitive photodetectors based on few‐layer GeAs2 exhibit highly anisotropic photodetection behavior with lineally dichroic ratio up to ≈2. This work on GeAs2 will excite interests in the less exploited regime of group IV–V compounds.

中文翻译:

高度平面各向异性2D GeAs2,用于偏振敏感光电检测

由于令人着迷的各向异性光学和电学性质,低对称性2D材料在基础研究和制造新颖的电子和光电器件方面都吸引了很多兴趣。识别出新的,有希望的低对称2D材料将对纳米电子学和纳米光电学的发展有所裨益。在这项工作中,二砷化锗(GeAs 2)是具有新颖的低对称性褶皱结构的IV-V族半导体,被作为一种良好的高度各向异性2D材料引入了快速发展的2D系列。GeAs 2的结构,振动,电和光学面内各向异性结合厚度依赖的研究,系统地进行了理论和实验研究。基于几层GeAs 2的偏振敏感光电探测器表现出高度各向异性的光电探测行为,线性二向色比高达≈2。关于GeAs 2的这项工作将激发人们对IV-V组化合物开发程度较低的兴趣。
更新日期:2018-10-14
down
wechat
bug