Abstract To obtain a material exhibiting magnetically induced reorientation (MIR), one of the magnetic shape memory effects, a well-developed method for single crystal growth is crucial. A [ 100 ] oriented Ni2MnGa single crystal exhibiting MIR was successfully prepared using the floating-zone technique with a high speed of 80 mm/h. The comparison with a sample grown by Bridgman method and a reference sample grown in AdaptaMat Ltd. by directional solidification is provided based on elemental homogeneity, crystallographic quality by x-ray diffraction, transformation behaviour and magnetic properties. All these methods indicated that the single crystal grown by floating zone with high speed is comparable or superior to the samples prepared by other methods. Importantly, the magnetization measurement revealed that the single crystal prepared this way exhibits MIR down to 10 K.

中文翻译：

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具有磁性形状记忆功能的 Ni2MnGa 单晶的快速浮区生长

摘要 为了获得一种表现出磁诱导重定向 (MIR) 的材料，这是一种磁性形状记忆效应，一种成熟的单晶生长方法至关重要。使用浮区技术以80 mm/h的高速成功制备了具有MIR的[100]取向Ni2MnGa单晶。基于元素均匀性、X 射线衍射结晶质量、转变行为和磁性，提供了与通过 Bridgman 方法生长的样品和在 AdaptaMat Ltd. 中通过定向凝固生长的参考样品的比较。所有这些方法都表明，浮区高速生长的单晶与其他方法制备的样品相当或优于其他方法。重要的，