Abstract Cerium doped aluminum nitride (AlN:Ce) hierarchical nanostructures were fabricated by a direct reaction of Al and CeO2 mixed ingot with ammonia using modified arc discharge method. X-ray diffractometry, Raman spectrum and x-ray photoelectron spectroscopy analysis obviously indicated that Ce3+ ions incorporated inside the AlN nanostructures. The prepared AlN:Ce exhibited a strong red-orange emission at 600 nm and showed room temperature ferromagnetism. These results suggest that AlN:Ce hierarchical nanostructures have potential as a light-emission nanodevice and diluted magnetic semiconductor.

中文翻译：

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Ce掺杂的AlN分层纳米结构的形成、光致发光和铁磁表征

摘要 采用改良电弧放电法，通过Al和CeO2混合铸锭与氨直接反应制备掺铈氮化铝(AlN:Ce)多级纳米结构。X 射线衍射、拉曼光谱和 X 射线光电子能谱分析明显表明 Ce3+ 离子掺入到 AlN 纳米结构中。制备的 AlN:Ce 在 600 nm 处表现出强烈的红橙色发射，并显示出室温铁磁性。这些结果表明，AlN:Ce 分级纳米结构具有作为发光纳米器件和稀磁半导体的潜力。