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Infrared‐Sensitive Memory Based on Direct‐Grown MoS2–Upconversion‐Nanoparticle Heterostructure
Advanced Materials ( IF 29.4 ) Pub Date : 2018-10-10 , DOI: 10.1002/adma.201803563
Yongbiao Zhai 1 , Xueqing Yang 2 , Feng Wang 2 , Zongxiao Li 3 , Guanglong Ding 1 , Zhifan Qiu 1 , Yan Wang 1 , Ye Zhou 3 , Su-Ting Han 1
Affiliation  

Photonic memories as an emerging optoelectronic technology have attracted tremendous attention in the past few years due to their great potential to overcome the von Neumann bottleneck and to improve the performance of serial computers. Nowadays, the decryption technology for visible light is mature in photonic memories. Nevertheless, near‐infrared (NIR) photonic memristors are less progressed. Herein, an NIR photonic memristor based on MoS2–NaYF4:Yb3+, Er3+ upconversion nanoparticles (UCNPs) nanocomposites is designed. Under excitation by 980 nm NIR light, the UCNPs show emissions well overlapping with the absorption band of the MoS2 nanosheets. The heterostructure between the MoS2 and the UCNPs acting as excitons generation/separation centers remarkably improves the NIR‐light‐controlled memristor performance. Furthermore, in situ conductive atomic force microscopy is employed to elucidate the photo‐modulated memristor mechanism. This work provides novel opportunities for NIR photonic memory that holds promise in future multifunctional robotics and electronic eyes.

中文翻译:

基于直接生长的MoS2上转换纳米粒子异质结构的红外敏感记忆

作为一种新兴的光电技术,光子存储器由于克服了冯·诺依曼瓶颈和提高串行计算机性能的巨大潜力,在过去几年中受到了极大的关注。如今,在光子存储器中,可见光的解密技术已经成熟。但是,近红外(NIR)光子忆阻器的进展较慢。本文设计了一种基于MoS 2 -NaYF 4:Yb 3+,Er 3+上转换纳米粒子(UCNPs)纳米复合材料的近红外光子忆阻器。在980 nm NIR光激发下,UCNPs的发射与MoS 2纳米片的吸收带完全重叠。MoS 2之间的异质结构UCNPs作为激子的产生/分离中心,显着提高了近红外光控忆阻器的性能。此外,采用原位导电原子力显微镜来阐明光调制忆阻器机制。这项工作为近红外光子存储提供了新的机会,为未来的多功能机器人技术和电子眼带来了希望。
更新日期:2018-10-10
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