A new conjugated polymer donor with alkylthio-substituted thiophene as π-bridge (namely PBZ-TS) is developed to further exploit the capability of alkylthio chains in designing high-performance donor materials. PBZ-TS possesses a broad absorption feature, a low-lying HOMO level, and high crystallinity. The polymer solar cell devices based on PBZ-TS:m-ITIC demonstrate high open-circuit voltage (V_oc) of 0.93 V. Especially, relative to the PBZ-TS:m-ITIC (1:1, w/w) based binary device, an enhanced power conversion efficiency (PCE) of 8.66% is achieved from the PBZ-TS:m-ITIC:PC₇₁BM (1:0.6:0.4, w/w) based ternary device resulting from the suppressed carrier recombination of binary blends. The results demonstrate that using alkylthio-substituted thiophene as π-bridge is an effective strategy to down-shift HOMO level and increase V_oc of the polymer donor materials for PSCs.

开发了一种以烷硫基取代的噻吩为π桥的新型共轭聚合物供体（即PBZ-TS），以进一步利用烷硫基链设计高性能供体材料的能力。PBZ-TS具有广泛的吸收特性，低水平的HOMO水平和高结晶度。基于PBZ-TS：m -ITIC的聚合物太阳能电池器件表现出0.93 V的高开路电压（V _oc）。尤其是相对于PBZ-TS：m -ITIC（1：1，w / w）通过使用PBZ-TS：m -ITIC：PC ₇₁，可将二进制设备的功率转换效率（PCE）提高到8.66％。基于BM（1：0.6：0.4，w / w）的三元器件，是由于二元混合物的载流子重组受到抑制。结果表明，使用烷硫基取代的噻吩作为π-桥是降低HOMO含量并增加PSC聚合物供体材料的V _oc的有效策略。